|Statement||[by] Hans L. Hartnagel.|
|LC Classifications||TK7872.G8 H37 1973b|
|The Physical Object|
|Pagination||xiv, 138 p.|
|Number of Pages||138|
|LC Control Number||74167094|
adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86ACited by: (The term diode is a misnomer for Gunn Effect devices since there is no junction, nor is rectification involved. The device is called a diode because it has two terminals, and the name is also convenient because it allows the use of anode for the “positive end of the slice. Experimental results are presented for fundamental logic performances in a planner Gunn-effect device with two separated cathodes, which was fabricated on an epitaxial GaAs grown on a semi-insulating substrate. By selecting the polarity of input trigger pulses with respect to that of the biasing voltage, two functions, exclusive-OR (comparator) and inclusive-OR can be realised, as found by our Cited by: 1. A further logic circuit is a Gunn-effect memory device, as shown in Fig. 3. The comparator enables one to switch the ring between `on' and `off'. If a negative pulse is applied at I, a signal will travel continuously round the loop formed by the comparator and the Gunn-effect diode D.
Further logic Gunn-effect elements have been reported’4*5’ such as an ‘exclusive or’, which is the basic device for an adder. These new devices should enable the development of exten-sive logic circuitry by utilizing the already available Gunn-effect elements. A method of fabricating planar Gunn-effect devices with Schottky-barrier gates has been improved by using the self-alignment technique. Dual-gate devices fabricated by this method have fine geometries and exhibited sufficiently good performance. Programmable Logic Devices: Technology and Applications by Geoff Bostock (Author) › Visit Amazon's Geoff Bostock Page. Find all the books, read about the author, and more. See search results for this author. Are you an author? Learn about Author Central. Geoff Bostock (Author) ISBN . Logic Devices III 1 Fundamentals of Logic Devices Requirements for Logic Devices In order to perform information processing in the real, physical world, the logical states must be mapped onto physical properties. This mapping may take place eh tn•o amplitude of physical properties, as e.g. the voltage levels in the CMOS cir-cuits, or.
Principles of Semiconductor Devices L Length m Ln Electron diffusion length m Lp Hole diffusion length m m Mass kg m0 Free electron mass kg me* Effective mass of electrons kg mh* Effective mass of holes kg n Electron density m-3 ni Intrinsic carrier density m-3 n(E) Electron density per unit energy and per unit volume m-3 n0 Electron density in thermal equilibrium m Questions concerning the transferred-electron effect and space-charge instabilities are explored, taking into account internal instability and domain formation, domain dynamics, the current-voltage characteristics of a device containing a steady-state domain, the domain transit-frequency, intervalley scattering and energy relaxation, and aspects of diffusion. The effect of spatial and temporal. up-to-date coverage of recent application fields, such as programmable logic devices, microprocessors, microcontrollers, digital troubleshooting and digital instrumentation. A comprehensive, must-read book on digital electronics for senior undergraduate and graduate students of electrical, electronics and computer engineering, and a valuable. Gunn Effect Page 5 of 7 9/13/ time, the domain has grown sufficiently to ensure that.